Vsat Structure for Nonvolatile Memory Device

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Patent Number: US8164134B2
Application Number: US2009481403A
Inventor: Kim, Ji-Young | Wang, Kang L. | Park, Yong-Jik | Han, Jeong-Hee | Hong, Augustin Jinwoo
Priority Date: 9 Jun 2009
Priority Number: US8164134B2
Application Date: 9 Jun 2009
Publication Date: 24 Apr 2012
IPC Current: H01L0029792 | H01L0027108
US Class: 257314 | 257328 | 257329 | 257330 | 257397
Assignee Applicant: Samsung Electronics Co. Ltd.
Title: Semiconductor device
Usefulness: Semiconductor device
Summary: Semiconductor device e.g. memory card of flash memory system used in data processing system such as mobile apparatus and desk computer.
Novelty: Semiconductor device e.g. memory card of flash memory system, has semiconductor pattern that comprises horizontal portion arranged between gate lines, connects upper and lower interconnection

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半導體

8164134

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Tech ID/UC Case

22317/2009-453-0

Related Cases

2009-453-0

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