Process for reducing surface roughness in polycrystalline silicon thin films
- 總結
- This technology is a rapid processing method for reducing the surface roughness of polycrystalline silicon thin-films.
- 技術優勢
- Rapidly reduces surface roughness in polycrystalline silicon thin films Can reduce surface roughness by more than 50%Can be used in reverse to create rough surfaces for other applicationsCompatible with high-throughput film production methods
- 技術應用
- Production of high-performance thin-film transistors from silicon and other materialsTransistor arrays for LCD and OLED displaysTransistor arrays for sensing devicesTransistor arrays for flexible electronics
- 詳細技術說明
- None
- *Abstract
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None
- *Inquiry
- Greg MaskelColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu
- *IR
- CU15223
- *Principal Investigation
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- *Publications
- Kim HJ and Im JS. “New excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si films for thin-film transitors.” Appl. Phys. Lett., 11 Mar 1996, 68, 1513-1515Hu Q, Lee CS, Li T, Deng Y, Chung UJ, Limanov AB, Chitu AM, Thompson MO, and Im JS . “Excimer-Laser-Induced Melting and Solidification of PECVD a-Si films under Partial-Melting Conditions. MRS Proceedings, 2011, 1321 197-202.Tech Ventures Reference:IR CU15223Licensing Contact: Greg Maskel
- 國家/地區
- 美國
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