Planarization of GaN by Photoresist Etchback Technique Using an Inductively Coupled Plasma
- 詳細技術說明
- None
- *Abstract
-
Planarization technique for III-nitride materials that produces fewer scratches compared to a chemo mechanical process and can achieve a 99% roughness reduction of up to 1nm without subsurface damage.
- 國家/地區
- 美國
欲了解更多信息，請點擊 這裡
