Planarization of GaN by Photoresist Etchback Technique Using an Inductively Coupled Plasma
- 详细技术说明
- None
- *Abstract
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Planarization technique for III-nitride materials that produces fewer scratches compared to a chemo mechanical process and can achieve a 99% roughness reduction of up to 1nm without subsurface damage.
- 国家/地区
- 美国
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