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Improved GaN Substrates Prepared with Ammonothermal Growth

技术优势

Smoother substrate surfaceImproved device efficiency

技术应用

LEDs and Laser DiodesHigh Electron Mobility Transistors (HEMTs)Power switching devices

详细技术说明

Researchers at the University of California, Santa Barbara have developed a method for growing m-plane GaN using an ammonothermal growth technique. Using this method, m-plane growth results in smoother surfaces than c-plane growth. M-plane growth has associated benefits such as p-type doping and inverted polarization charge. High p-type conductivity improves device efficiency, while transistors grown on m-plane GaN overcome high gate leakage problems of traditional GaN transistors. M-plane optical devices also experience higher emission efficiency due to the absence of a polarization field, and their optically active layer usually has higher Indium incorporation, allowing for longer wavelength emission. This novel method also reduces processing steps because flip-chip bonding and de-bonding steps are no longer needed to expose the m-plane of the growth.

*Abstract

A method for growing m-plane GaN using an ammonothermal growth technique.

 

*IP Issue Date

Jul 13, 2010

*Principal Investigation

Name: Tadao Hashimoto

Department:

Name: Shuji Nakamura

Department:

Name: Hitoshi Sato

Department:

申请号码

7755172

其他

Background

The usefulness of gallium nitride (GaN) and its alloys has been well established for its use in the fabrication of optoelectronic and high-powered electronic devices. Most commercially available GaN-based devices are grown on conventional c-plane surfaces. The use of c-plane surfaces has disadvantages, which limit the performance of resulting devices. Recent studies have pointed out several benefits and advantages of growing m-plane devices. Despite these benefits, current technology is limited due to poor smoothness of m-plane surfaces.

 

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• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Group III-Nitride Crystals using Supercritical Ammonia and Nitrogen
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
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• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
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• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
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• Method for Enhancing Growth of Semipolar Nitride Devices
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• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
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• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
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• Contact Architectures for Tunnel Junction Devices
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
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Tech ID/UC Case

23650/2006-666-0

Related Cases

2006-666-0

国家/地区

美国