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Low Temperature Growth of Gallium Nitride Thin Films

Detailed Technology Description
Researchers at the University of Nebraska—Lincoln have developed a method to fabricate high quality GaN thin-films quickly at low temperatures.
*Abstract
None
*Inventors
Yongfeng LuH.R. GolgirY. Zhou
*Licensing
Zane Gernhart, Ph.D.Technology Manager zgernhart@nutechventures.orgPhone: 515-408-4685
Country/Region
USA

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