Quasi Van Der Walls Epitaxy Of GaAs on Graphene

Cost-effectiveVersatile on any substrateThermal stable buffer layer

Fabrication of optoelectronic devicesIntegration of III-V materials with Si microelectronicsCreate ultra thin nucleation layer of GaAs atop any arbitrary substrate using graphene

UCLA researchers have developed a novel method to grow a thin uniform continuous layer of GaAs compound on Si with graphene as a buffer layer. Graphene’s thermal properties make it an ideal material for buffer layer. This method can be used in all applications and devices where high quality III-V is required as an oriented or epitaxial layer, which employs graphene to create a physical junction. It can also be used to create ultra thin nucleation layer of GaAs atop any arbitrary substrate using graphene.

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Background

III-V materials typically have direct bandgaps, higher carrier mobility, thus making them suitable candidates for high-speed optoelectronic and electronic devices. The integration of III-V materials with Si microelectronics is a burgeoning field with the goal of achieving high speed and efficient optical devices that can be fabricated at a significant performance and cost advantage using standard semiconductor fabrication technologies.

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Tech ID/UC Case

29037/2015-456-0

Related Cases

2015-456-0

USA

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