Enhancement Mode AlGaN/GaN Transistor
- Detailed Technology Description
- An enhancement mode for high speed AlGaN/GaN transistors was developed for improved performance over conventional passivation technologies.
- Others
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Patent applications: WO/2011/163318; US13/389,127; CN201180004026.8
- *Abstract
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An enhancement mode for high speed AlGaN/GaN transistors was developed for improved performance over conventional passivation technologies. The transistors are made by selectively diffusing Mg into the AlGaNbarrier layer under the gate electrode to introduce fixed negative charge(ionized acceptors). This results in a shift of the threshold voltage (pinchoff condition) from a negative voltage to a positive voltage, allowingenhancement mode device operation. Because the Mg diffusion is selective,enhancement mode devices can be integrated with depletion mode devices on thesame hetero-epitaxial substrate.
Potential Application:
Smartenergy management, e.g. to improve power conversion of high voltage solar andwind energy resources
Advantages:
- Operatesin enhancement mode for improved performance
- Can integrate with depletion mode devices on the same substrate
- *Licensing
- Patrick Govang pjg26@cornell.edu607-254-2330
- Country/Region
- USA
