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Growth of Group III-Nitride Crystals using Supercritical Ammonia and Nitrogen

Technology Benefits: Avoid ammonia dissociation Faster than previous ammonothermal growthCan be scaled up to industrial mass production

Technology Application: Growth of group III-nitride crystals This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Detailed Technology Description: Researchers at the University of California, Santa Barbara have developed an ammonothermal growth method for high-quality group III-nitride bulk crystals at commercially practical growth rates. This process involves increasing the nitrogen pressure in the reaction vessel to avoid disassociation of the ammonia and solves the issues related to state-of-the-art ammonothermal methods.

Supplementary Information: Patent Number: US7803344B2
Application Number: US2007977661A
Inventor: Hashimoto, Tadao
Priority Date: 25 Oct 2006
Priority Number: US7803344B2
Application Date: 25 Oct 2007
Publication Date: 28 Sep 2010
IPC Current: C01B002106
US Class: 423409 | 423111
Assignee Applicant: The Regents of the University of California
Title: Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby
Usefulness: Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby
Summary: Method for growing group III nitride crystal such as single crystalline group III nitride crystal e.g. gallium nitride crystal used for wafer (all claimed) used in light emitting device, and electronic device such as light emitting diode, laser diode, microwave power transistor and solar-blind photodetector used in cell phone, indicator and display.
Novelty: Method for growing group III nitride crystals e.g. gallium nitride crystal for wafer, involves supplying group III source, seed crystal and mineralizer to reaction vessel, filling ammonia and nitrogen, and raising temperature

Industry: Electronics

Sub Category: 3C/Gadgets

Application No.: 7803344

Others

Background

Ammonothermal growth has the potential for growing large bulk group III-nitride crystals, because supercritical ammonia used as a fluid medium has high solubility of source materials, such as group III-nitride polycrystals, and has high transport speed of dissolved precursors. However, the growth rate of high-quality group III-nitride single crystals becomes very slow when using the ammonothermal method. The tate-of-the-art ammonothermal method is limited by the growth rate of the group III-nitride crystal, which impedes the application of this method to industrial mass production.

Additional Technologies by these Inventors

Tech ID/UC Case

21920/2007-774-0

Related Cases

2007-774-0

*Abstract: An ammonothermal growth method for high-quality group III-nitride bulk crystals at commercially practical growth rates.

*IP Issue Date: Sep 28, 2010

*Principal Investigator: Name: Tadao Hashimoto
Department:

Country/Region: USA

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