Bimorph Piezoelectric Micromachined Ultrasonic Transducers
- Technology Benefits
- - 10X improved linearity- 400% improvement central displacement- 4X performance enhancement
- Technology Application
- - Ultrasonic gesture recognition- Range finding- Finger print identification- Medical imaging- Energy harvesting
- Detailed Technology Description
- None
- Application No.
- 20170368574
- Others
-
Tech ID/UC Case
24475/2015-051-0
Related Cases
2015-051-0
- *Abstract
-
Piezoelectric Micromachined Ultrasonic Transducers (pMUTs) have attracted industry attention for their good acoustic matching, large bandwidth, miniaturization, and low cost-by-batch fabrication. pMUTs have the advantages of low power consumption and large deflection for high-acoustic power applications. However, low electromechanical coupling has been a serious drawback for pMUT applications, in some cases foreclosing key opportunities.
In response to this challenge, researchers at UC Berkeley have developed a bimorph pMUT with unique advantages which dramatically improve the device capabilities: the bimorph pMUT utilizing two active AlN layers in a CMOS-compatible process. This innovative design is the first bimorph pMUT with two active piezoelectric layers separated by a common electrode.
The prototype bimorph pMUT has a resonant frequency of 198.8 kHz and central displacement of 407.4 nm/V. Under the differential drive scheme using the dual electrodes at low frequency, the measured central displacement is 13.0 nm/V, which is about 400% higher than that of a unimorph AlN pMUT. This revolutionary dual electrode bimorph pMUT presents a new class of design/fabrication for exciting pMUT applications, including range finders and gesture recognition devices.
- *IP Issue Date
- Dec 28, 2017
- *Principal Investigator
-
Name: Sina Akhbari
Department:
Name: Liwei Lin
Department:
Name: Firas Sammoura
Department:
- Country/Region
- USA
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