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Integrated Etched Multilayer Grating-based Wavelength Demultiplexer

Detailed Technology Description
A novel very shallow etched-grating structure is proposed as a wavelength multiplexer/demultiplexer. Two possible configurations for the Silicon-On-Insulator (SOI) structure are available. Device fabrication using single-step-etched e-beam lithography in Silicon-On-Insulator is targeted. This device represents an alternative to conventional integrated etched grating demultiplexers/spectrometers using a deep etched total internal reflection based grating or to arrayed waveguide demultiplexer structures. The proposed device is easy to fabricate, versatile, adaptable and compatible with next generation silicon photonics components.
*Abstract
Country/Region
USA

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