Self-Assembled Nanodielectrics (SANDs) with Improved Leakage Protection for High Performance Semiconductor Devices
- Technology Benefits
- • Excellent leakage current density, capacitance and dielectric properties • Readily processable • Amenable to microelectronic techniques
- Detailed Technology Description
- Novel SAND organic dielectrics suitable for high-performance III-V semiconductor devices such as metal-insulator-semiconductor field effect transistors (MISFETs) #materials #semiconductor #component
- *Abstract
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Northwestern researchers have developed novel organic self-assembled nanodielectrics (SAND) suitable for high-performance III-V semiconductor devices such as metal-insulator-semiconductor field effect transistors (MISFETs). Replacing traditional Si or strained Si with III-V compound semiconductors as conduction channels continues to be an active research frontier because of their excellent electrical properties of these semiconductors. However, the principle obstacle to the II-V compound semiconductors has typically been the want of high quality, thermodynamically stable insulators on GaAs or III-V materials in general. Here, gallium arsenide (GaAs) MISFETs with excellent performance have been fabricated using very thin self-assembled nanodielectrics (SANDs) as the insulating layer. SANDs are effective insulators in organic thin-film transistors (OTFTs) affording excellent leakage current density (~ 10-9 A/cm2, SiO2 on Si), capacitance (~0.025 pF/m²) and dielectric (k~16) properties. They are readily processed and amenable to standard microelectronic techniques.
- *Inventors
- Tobin Marks* Antonio Facchetti Gang Lu Peide Ye Han Chung Lin
- Country/Region
- USA
