Organic Electro-Optic Modulators with Transparent Electrodes and Device Structures
- Technology Benefits
- Lower switching voltageImproved performanceCompact structure
- Detailed Technology Description
- A novel construction for electro-optic (EO) modulators and related devices. #communications #wireless #devices #optoelectronic
- *Abstract
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Northwestern researchers have developed anovel construction for electro-optic (EO) modulators and related devices. EO optical intensity modulators are widelyused in optical fiber communications to modulate light from semiconductorlasers to produce the required optical pulses carrying digital data fortransmission. At high modulation rates (above 10 Gbits/sec), a frequencychirped pulse (change in the lasing frequency at the leading and trailing edgesof the pulse) will be rapidly broadened in width after propagating through along length of optical fiber causing serious degradation in the signalintegrity. Thus, external optical intensity modulators are needed for longdistance optical communications at bit rates at or above 10 Gbits/sec. Current commercially-available high-speed EOoptical intensity modulators are based on lithium niobate crystals and requireabout 0.5 W of electrical power, which is high and quite inefficient in termsof electrical-to-optical signal-power conversion for typical semiconductorlaser power. While there is muchinterest in reducing the modulator driving voltage, current modulator designsand component materials tend to limit further advances in performance. Thepresent invention provides electro-optic modulators and related devices thataddress these shortcomings. Theresearchers have designed a modulator that utilizes organic electro-opticmaterials with exceptionally high EO coefficients. By incorporating transparent conducting oxideelectrode bridge components and horizontal optical mode confinement withoptimized electrical and optical characteristics, it exhibits lower switchingpower and a compact device structure. This combination of design and materials promise significant advancementfor long distance optical communications at 10 Gbits/sec bit rates and above.
- *Inventors
- Tobin Marks*Seng-Tiong HoFei Yi
- Country/Region
- USA
