AsiaIPEX is a one-stop-shop for players in the IP industry, facilitating IP trade and connection to the IP world. Whether you are a patent owner interested in selling your IP, or a manufacturer looking to buy technologies to upgrade your operation, you will find the portal a useful resource.

Back to search results

SILICON CARBIDE SCHOTTKY DIODES

Summary

The present invention relates to silicon carbide Schottky diodes and methods of productions of such diodes. In particular, the present invention relates to silicon carbide Schottky diodes comprising edge termination structures to reduce perimeter leakage.

Technology Benefits

Higher effeciency Schottky diodes and a more cost effective production process.

Technology Application

Semiconductor Manufacturing

Detailed Technology Description

A silicon carbide (SiC) Schottky diode comprises a layer of N-type SiC and a layer of P-type SiC in contact with the layer of N-type SiC creating a P-N junction. An anode is in contact with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC. An edge of the layer of P-type SiC is electrically active and comprises a tapered negative charge density at the P-N junction, which can be achieved by a tapered or sloping edge the layer of P-type SiC.

Type of Cooperation

Licensing

Application Date

13/12/2017 00:00:00

Application No.

PCT/AU2017/051377

Country/Region

USA

For more information, please click Here