Media.Player

A Transflective Liquid Crystal Device and Method of Manufacturing the Same适用于显示器的多晶硅薄膜象素电极

Summary

The present invention presents the construction of electrodes for liquid-crystal cells using metal-induced laterally crystallized (MILC) polycrystalline silicon (Poly-Si), and the integration of these electrodes in the construction of thin-film transistors. MILC poly-Si. This is shown to possess adequately high electrical conductance and low absorption of visible light. Integration is possible since the MILC poly-Si is also known to be a good material for the construction of thin-film transistors. Furthermore, the same dielectric material can be used both as the gate dielectric for transistors and insulators covering the electrodes.

Replacement of conventional indium-tin oxide by MILC poly-Si leads to process simplification, with the elimination of (1) deposition and patterning of and (2) formation of contact holes to the indium-tin oxide electrode. Ultimately, such replacement results in significant reduction of manufacturing costs.

Technology Benefits

1. Novel
2. Elimination of deposition and patterning of indium-tin oxide electrode
3. Elimination of formation of contact holes to the indium-tin oxide electrode
4. Introduction of new materials results in significant reduction of manufacturing costs

Technology Application

- Flat panel display products including active-matrix displays based on poly-Si

Supplementary Information

Patent Number: CN100592174C
Application Number: CN200580049823A
Inventor: Haicheng Guo | Zhiguo Meng | Wen Wang
Priority Date: 21 May 2005
Priority Number: CN100592174C
Application Date: 21 May 2005
Publication Date: 24 Feb 2010
IPC Current: G02F00011343
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Transflective liquid crystal device and method of manufacturing the same | Transflective liquid crystal device and its preparation method
Usefulness: Transflective liquid crystal device and method of manufacturing the same | Transflective liquid crystal device and its preparation method
Summary: Transflective active-matrix type liquid crystal display device.
Novelty: Transflective active-matrix type liquid crystal display device, has polycrystalline silicon film in which pixel electrode and active layer of thin-film transistor are formed, where silicon has large grain size

Industry

Electronics

Sub Category

Display

Application Date

19 Nov 2007

Application No.

Chinese 200580049823.2

Patent Information

Chinese ZL200580049823.2

ID No.

TTC.PA.199

Country/Region

Hong Kong