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Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors非晶硅金屬誘導晶化

Display is a large and still continuously expanding market. Flat-panel display is the dominating segment in the industry which involves the use of active-matrix driving technology. In conventional active matrix displays, thin film transistors (TFTs) are formed by amorphous silicon (a-Si). However, it has been difficult to use the amorphous silicon TFT for advanced applications such as a liquid crystal display having very high resolution. For lower power consuming more compact structures, polycrystalline Si (poly-Si) is needed.

The present invention provides a method of forming the active polycrystalline layer using the technique of patterned crystallization with the assistance of metal impurities. The sufficient concentration of metal is introduced into major regions to induce crystallization while insufficient concentration of metal is also introduced into the minor regions to induce crystallization so as to enhance the local crystallization rate. With several other procedures, resulting polycrystalline thin film consists of relatively large crystalline grains with well-defined directions of grain growth. The alignment misplacement caused by the shrinkage of glass can be avoided and the crystallization time can be well controlled with the use of poly-Si layer.

The invention can be applied in AMLCD and AMOLED such as for TV, monitor and 3G phone PDA in the flat-panel display industry.
Technology Benefits
1. Able to control grain growth in active area
2. Reduce alignment misplacement caused by the shrinkage of the substrate during the crystallization
3. No need for nickel gettering
4. Predetermine initial crystallization points, so the crystallization time can be well controlled
5. Exhibits excellent uniformity for the poly-Si film with the same grain size and same grain shape
6. Able to obtain Hexagonal honeycomb grains and semi-parallel grains
Technology Application
- AMLCD and AMOLED for high definition televisions, monitors, 3G phones and PDAs
Supplementary Information
Patent Number: US7790580B2
Application Number: US2007684447A
Inventor: Kwok, Hoi Sing | Wong, Man | Meng, Zhiguo | Zhao, Shuyun | Wu, Chunya
Priority Date: 13 Mar 2006
Priority Number: US7790580B2
Application Date: 9 Mar 2007
Publication Date: 7 Sep 2010
IPC Current: H01L002120 | H01L002136
US Class: 438478 | 257576 | 257E21412 | 257E23164
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Metal-induced crystallization of amorphous silicon in thin film transistors
Usefulness: Metal-induced crystallization of amorphous silicon in thin film transistors
Summary: For forming polycrystalline silicon film for use in thin film transistors.
Novelty: Forming method of polycrystalline silicon film for thin film transistors involves annealing composite layer of thin film at sufficient temperature in order to convert first layer of amorphous silicon thin film into polycrystalline silicon
Sub Category
Application Date
3 Sep 2007
Application No.
US 11/684447
Patent Information
US 7790580
ID No.
Hong Kong

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