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III-N Based Material Structures and Circuit Modules Based on Strain Management

Technology Benefits

Mobility is increased by 4xAbility to hold substantial voltage (>2V) High frequency, high voltage, and high current

Technology Application

III-N materials Materials in all polarities and crystal planesPush-pull amplifiers Wideband amplifiersMixed signal architectures

Detailed Technology Description

Researchers from UC Santa Barbara, have created a method and composition to apply uniaxial strain on gallium nitrides to increase mobility and electron velocity. This composition involves modifying the hole or the electron by using a uniaxial strain to alter electronic and photonic device performance and as a result enable a brand new class of circuit embodiments. By using uniaxially strained GaN, the hole effective mass in GaN is reduced to values below the effective mass of electrons resulting in a significant increase in the hole mobility. Conversely, using relaxed InGaN as the channel material, the electron velocity is significantly increased. This provides a reduced electron effective mass, which is critical in reducing electron scattering and enhancing electron velocity. This new way of using strain to engineer group-III nitride properties shows us an exciting pathway of developing complementary GaN technology.

Others

Background

P-type channel devices are limited due to the natural characteristics, including the effective mass of holes, associated with the p channel. The lower the effective mass, the higher the hole mobility in these p-type channel devices. Current complementary metal-oxide semiconductor (CMOS) architectures are the most commonly used architectures in silicon. However, they have not been attractive in GaN because of the limitations of the p-MOSFET that are present. It would be beneficial to find a way to enable a high-performance GaN p-MOSFET which would allow CMOS architectures where both the n-type and p-type devices can be oriented in the same direction.

Additional Technologies by these Inventors

• Novel Current-Blocking Layer in High-Power Current Aperture Vertical Electron Transistors (CAVETs)
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Polarization-Doped Field Effect Transistors with Increased Performance
• High-Quality N-Face GaN, InN, AlN by MOCVD
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• GaN-based Vertical Metal Oxide Semiconductor and Junction Field Effect Transistors
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• A Structure For Increasing Mobility In A High-Electron-Mobility Transistor
• Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers
• Improved Performance of III-Nitride Photonic Devices
• Gated Electrodes For Electrolysis And Electrosynthesis
• Fabrication of N-face to Improve Telecommunications Efficiency
• Methods for Locally Changing the Electric Field Distribution in Electron Devices

Tech ID/UC Case

28861/2017-99F-0

Related Cases

2017-99F-0

*Abstract

A method and composition to apply uniaxial strain on gallium nitrides to increase mobility and electron velocity.

*Principal Investigator

Name: Elaheh Ahmadi

Department:

Name: Stacia Keller

Department:

Name: Umesh Mishra

Department:

Country/Region

USA