High Density 3D Stacked RRAM Cache Designs
- 总结
- Purdue University researchers have designed a memristor that stacks more crossbars for the same amount of space, allowing its density to be nearly doubled. This design sets the next generation in energy density and proves itself as an interesting design alternative because of its higher energy density and the dynamic insulator's thickness equivalent to three memristor layers. Since the number of crossbars is fewer for the new, extrapolated design, the power dissipation on the crossbars is expected to be reduced compared to conventional design. Field-programmable gate arrays (FPGAs) would greatly benefit from this design due to their need for large amounts of programmed data.
- 技术优势
- Reduced footprint and increased storage capacity
- 技术应用
- High computer memory densityImplantable devicesField-programmable gate arrays (FPGAs)ComputersElectrical Circuits
- 详细技术说明
- Selva Vadivel MuruganPurdue Information Technology
- *Abstract
-
- *Background
- A memistor, or memory resistor, is one of the basic elements of electronic circuits because it can't be replaced by either a resistor, capacitor, or inductor. In 3D memory integration of memristors, layers of crossbars are stacked upon one another on a substrate with each layer separated by a layer of insulator. Each crossbar layer has row and column bars with memristor layers in-between. Inefficiencies exist in footprint and storage capacity as a result of this design.
- *IP Issue Date
- None
- *IP Type
- Provisional
- *Stage of Development
- Proof of concept
- *Web Links
- Purdue Office of Technology CommercializationPurdue Innovation and EntrepreneurshipSelva Vadivel MuruganPurdue Information Technology
- 国家
- United States
- 申请号码
- N/A
- 国家/地区
- 美国
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