NAMD is a parallel molecular dynamics code designed for high-performance simulation of large biomolecular systems.
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A method of forming a nanoscale three-dimensional pattern in a porous semiconductor includes providing a film comprising a semiconductor material and defining a nanoscale metal pattern on the film, where the metal pattern has at least one lateral dimension of about 100 nm or less in size.
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The invention is a novel method for manufacturing porous semiconductors, including silicon (Si), gallium nitride (GaN) and silicon carbide (SiC).
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