The present invention relates to the construction of hyperbranched polytriazoles and linear and hyperbranched poly(aroyltriazole)s by Huisgen 1,3-dipolar polycycloaddition. The polymers were prepared by A2 + B3 methodology to avoid self-polymerization during monomer preparation and storage. A new cl.....
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The present invention relates to a novel polysilicon material, novel polysilicon based electronic devices, and the fabrication methods therefore. In particular, the invention relates to a novel metal induced lateral crystallization polysilicon (MILC poly-Si) fabrication technique that may be employ.....
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Thin film transistors (TFTs) fabricated on polycrystalline silicon (polysilicon) have gained much attention in flat panel displays such as active matrix liquid crystal displays (LCDs) and in static random access memory (SRAM) units. In comparison with thick film devices TFT devices made with a thin .....
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