Voltage-Controlled Magnetic Tunnel Junction Switch And Magnetic Memory Bit
Scalable Nonvolatile High speed High endurance High density Energy efficient Radiation hardness
Implementation in mobile devices such as digital cameras, laptops, cellular phones, media players, book readers, etc.
Researchers at UCLA have developed a magnetic tunnel junction switch system and a magnetic memory bit using voltage-controlled technologies. This invention describes the basic functionality for the realization of a Magneto-Electric (i.e. voltage controlled) MRAM system that does not require the transfer of charges thus making this technology more energy efficient than other MRAM technologies such as spin transfer torque and thermally-assisted switching.
State Of Development Researchers have designed prototype devices and are conducting theoretical and simulation studies. The voltage-induced switching of magnetic tunnel junctions has been experimentally demonstrated. Background Magnetic Random Access Memory (MRAM) is advantageous because of its non-volatile nature, high speed, high endurance, high density and its lower power consumption over conventional RAM chip technologies. It's especially useful for nonvolatile memory applications where low energy consumption is critical, such as in mobile communication and computing systems, as well as in medical implants and sensors. Because of the many advantages, it has been suggested that MRAM may eventually become the basis for all types of memory. Tech ID/UC Case 22133/2011-524-0 Related Cases 2011-524-0
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