Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
技術優勢
Reduced strain on device layersReduced thread and misfit dislocationsHigh thickness/composition group-III nitride stackingReduced complications of lattice mismatchImproved device performance
技術應用
UV and Green Region LEDs and LDsGroup-III Nitride MaterialsOptoelectronics and Electronic Devices
詳細技術說明
Researchers at the University of California, Santa Barbara have developed a new method to improve performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates to prevent lattice plane slip. This new process uses silicon doping to create a new relaxed buffer layer with limited thread dislocations. This new buffer layer reduces the strain during subsequent growth of III-nitride alloy layers. By reducing this strain on the layers using this process, lattice plane slip is prevented, new thread dislocations are prevented, and overall defect density is reduced allowing for higher performance for ultra-bright LEDs, LDs, and high powered electronic devices.
附加資料
Patent Number: US20120286241A1 Application Number: US13470598A Inventor: Hardy, Matthew T. | Hsu, Po Shan | DenBaars, Steven P. | SPECK, James S. | Nakamura, Shuji Priority Date: 13 May 2011 Priority Number: US20120286241A1 Application Date: 14 May 2012 Publication Date: 15 Nov 2012 IPC Current: H01L004900 | H01L002120 US Class: 257014 | 257E2109 | 257E49003 | 438478 Assignee Applicant: The Regents of the University of California Title: SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N Usefulness: SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N Summary: The method is useful for fabricating III-nitride based semiconductor device (claimed), which is useful for fabricating optoelectronic devices (LEDs and laser diodes), electronic devices (a transistor or high electron mobility transistor), or solar cells. Novelty: Fabricating III-nitride based semiconductor device, useful for e.g. optoelectronic devices (LEDs and laser diodes), comprises growing buffer layer on or above semi-polar or non-polar gallium nitride substrate, and doping the buffer layers
主要類別
環保/綠色科技
細分類別
太陽能電池
申請號碼
8772758
其他
Background
The usefulness of group-III nitrides such as gallium nitride (GaN) and its alloys has been well established for its use in the fabrication of optoelectronic and high-powered electronic devices. Given recent trends in industry standards, it is desirable to produce ultra-bright LEDs and LDs in the green regions, including colors such as green, amber, and red. The problem with producing LEDs and LDs in the green regions by epitaxy is due to the complications in producing high quality, thick, and high in composition crystals. During growth, the lattice planes of the crystals slip, causing additional threading dislocations which will result in misfit dislocations that degrade the performance of the device.
