亞洲知識產權資訊網
Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
技術優勢
Low alkali-metal diffusionImproved device performance
技術應用
LEDs and Laser DiodesHigh Electron Mobility Transistors (HEMTs)Power switching devices
詳細技術說明
Researchers at the University of California, Santa Barbara have developed a method to produce hexagonal würtzite type epitaxial layers possessing low alkali-metal concentration. While incorporation of alkali-metals is essential to the growth process, they have a negative impact on device properties. We have found that the diffusion of alkali-metals into the epitaxial layer strongly depends on the crystal plane of the substrate and therefore can be effectively suppressed. This method produces bow-free GaN substrates containing low structural defect densities in a cost effective manner, allowing manufacturers of both devices and substrates to benefit.
申請號碼
8647967
其他
Background
A high-quality substrate is essential for fabrication of GaN devices, which has led to various approaches for growing GaN single crystal substrates. In most approaches, alkali-metals are added to the growth system, causing the grown GaN crystals to contain high concentrations of alkali-metals. This high concentration of alkali metals severely increases the likelihood that alkali-metals will diffuse into the epitaxial layers, having a negative impact on the electrical properties and performance of devices.
Additional Technologies by these Inventors
Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy Nonpolar (Al, B, In, Ga)N Quantum Well Design Improved Manufacturing of Semiconductor Lasers Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD GaN-Based Thermoelectric Device for Micro-Power Generation Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films Method for Growing High-Quality Group III-Nitride Crystals Growth of Planar Semi-Polar Gallium Nitride Defect Reduction of Non-Polar and Semi-Polar III-Nitrides MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride Lateral Growth Method for Defect Reduction of Semipolar Nitride Films Low Temperature Deposition of Magnesium Doped Nitride Films Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure Phosphor-Free White Light Source Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate High Efficiency LED with Optimized Photonic Crystal Extractor Packaging Technique for the Fabrication of Polarized Light Emitting Diodes LED Device Structures with Minimized Light Re-Absorption (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance Oxyfluoride Phosphors for Use in White Light LEDs III-V Nitride Device Structures on Patterned Substrates Growth of Semipolar III-V Nitride Films with Lower Defect Density Improved GaN Substrates Prepared with Ammonothermal Growth Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures Photoelectrochemical Etching for Chip Shaping Of LEDs Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs Defect Reduction in GaN films using in-situ SiNx Nanomask Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183) Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150) Nonpolar III-Nitride LEDs With Long Wavelength Emission Method for Growing Self-Assembled Quantum Dot Lattices Method for Increasing GaN Substrate Area in Nitride Devices Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique Optimization of Laser Bar Orientation for Nonpolar Laser Diodes UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys Low-Droop LED Structure on GaN Semi-polar Substrates Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices Growth of High-Performance M-plane GaN Optical Devices Method for Enhancing Growth of Semipolar Nitride Devices Transparent Mirrorless (TML) LEDs Solid Solution Phosphors for Use in Solid State White Lighting Applications Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices High Light Extraction Efficiency III-Nitride LED Tunable White Light Based on Polarization-Sensitive LEDs Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates Improved Anisotropic Strain Control in Semipolar Nitride Devices III-Nitride Tunnel Junction with Modified Interface Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide Increased Light Extraction with Multistep Deposition of ZnO on GaN Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices Calcium Impurity Reduction for Improved Light-Emitting Devices Contact Architectures for Tunnel Junction Devices New Blue Phosphor for High Heat Applications Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals Methods for Fabricating III-Nitride Tunnel Junction Devices Multifaceted III-Nitride Surface-Emitting Laser Laser Diode System For Horticultural Lighting Fabricating Nitride Layers Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation Laser Lighting System Incorporating an Additional Scattered Laser Tech ID/UC Case
23657/2008-658-0
Related Cases
2008-658-0
國家/地區
美國
