Oxyfluoride Phosphors for Use in White Light LEDs

•    High efficiency •    Good color rendering properties •    Variety of applications

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Researchers at the University of California, Santa Barbara have invented a novel Ce3+-doped oxyfluoride phosphor material for solid-state lighting applications. This invention produces much higher photoluminescence intensities than commercial Ce3+, allowing for tunability of emission color and excitation band, resulting better light quality with high efficiency. Moreover, this material can be used for white light generation with a number of phosphor combinations (near UV light with red, green-orange or yellow phosphors) and allows for greater color rendering.

Patent Number: WO2010148109A1
Application Number: WO2010US38852A
Inventor: IM, Won-Bin | SESHADRI, Ram | DENBAARS, Steven, P.
Priority Date: 16 Jun 2009
Priority Number: WO2010148109A1
Application Date: 16 Jun 2010
Publication Date: 23 Dec 2010
IPC Current: H01J000162
Assignee Applicant: The Regents of the University of California
Title: OXYFLUORIDE PHOSPHORS AND WHITE LIGHT EMITTING DIODES INCLUDING THE OXYFLUORIDE PHOSPHOR FOR SOLID-STATE LIGHTING APPLICATIONS | LUMINOPHORES DE TYPE OXYFLUORURE, ET DIODES ÉLECTROLUMINESCENTES BLANCHES COMPRENANT LE LUMINOPHORE DE TYPE OXYFLUORURE, POUR
Usefulness: OXYFLUORIDE PHOSPHORS AND WHITE LIGHT EMITTING DIODES INCLUDING THE OXYFLUORIDE PHOSPHOR FOR SOLID-STATE LIGHTING APPLICATIONS | LUMINOPHORES DE TYPE OXYFLUORURE, ET DIODES ÉLECTROLUMINESCENTES BLANCHES COMPRENANT LE LUMINOPHORE DE TYPE OXYFLUORURE, POUR DES APPLICATIONS D'ÉCLAIRAGE À L'ÉTAT SOLIDE
Summary: The apparatus is useful for solid state lighting applications.
Novelty: Apparatus for solid state lighting applications, comprises a LED for emitting light, and a phosphor optically coupled to the LED, where phosphor comprises a first phosphor that is mixed with a second phosphor to create a phosphor mixture

光學

燈光

8344611

Background

White light generation for most commercial light emitting diode (LED) lamps employ yellow Ce3+ phosphors excited by blue InGaN diodes due to their unsurpassed efficiency. However, the Ce3+ phosphors have relatively weak emissions in the red region. Moreover, the color output from these phosphors is strongly dependent on temperature and current, creating problems for high power LEDs.

 

 

Additional Technologies by these Inventors

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• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
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• III-V Nitride Device Structures on Patterned Substrates
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• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
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• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
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• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
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• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
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Tech ID/UC Case

23416/2009-704-0

Related Cases

2009-704-0, 2010-022-0

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