Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
技術優勢
Allows simple production of GaN wafers of any orientations Less impurities on the crystals compared to previous grow methods Faster than previous methods and easily scalable Cost effective
技術應用
Gallium nitride wafers This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
詳細技術說明
Researchers at the University of California, Santa Barbara have developed a method to grow polyhedron-shaped GaN bulk crystals, which are not possible using existing growth methods. This shape of GaN crystals has an advantage over the existing platelet-shaped GaN since GaN wafers of any orientation can be obtained simply by slicing the polyhedron.
附加資料
Patent Number: US8253221B2 Application Number: US2008234244A Inventor: Hashimoto, Tadao | Nakamura, Shuji Priority Date: 19 Sep 2007 Priority Number: US8253221B2 Application Date: 19 Sep 2008 Publication Date: 28 Aug 2012 IPC Current: H01L002920 US Class: 257615 | 257E21697 | 423409 | 438604 Assignee Applicant: The Regents of the University of California Title: Gallium nitride bulk crystals and their growth method Usefulness: Gallium nitride bulk crystals and their growth method Summary: (I) is useful: in a GaN wafer (claimed); and for fabrication of visible and ultraviolet optoelectronic devices and high-power electronic devices. The method is useful for growing other III-nitrides such as aluminum nitride and indium nitride. Novelty: New gallium nitride crystal having polyhedron shape with exposed specific m-planes and exposed specific N-polar c-plane, useful in gallium nitride wafer
主要類別
電子
細分類別
半導體
申請號碼
8253221
其他
Background
In order to eliminate the problems arising from heteroepitaxial growth, gallium nitride wafers sliced from bulk GaN crystals must be used. A new technique for growing bulk GaN crystals is based on using supercritical ammonia, which has high solubility of source materials, and which has high transport speed of dissolved precursors. This ammonothermal method has a potential for growing large GaN crystals. However, existing technology is limited by the crystal size, because the growth rate is not fast enough to obtain large crystals.
