Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN

Lower thresholds and higher efficiencies than standard polar c-plane laser diodes May offer higher wall-plug efficiencies than can be achieved with LEDs Smooth low loss mirror facets with high reflectivity

High Brightness Lighting Displays High Resolution Printers Projection Displays Next Generation DVD Players Medical Imaging Efficient Solid-State Lighting  This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Researchers at the University of California, Santa Barbara have developed cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates. Because the devices are grown on a semipolar orientation, they have lower thresholds and higher efficiencies. The efficiency is further increased due to smooth, low loss cavities achieved by cleaved mirror facets. These devices are applicable to high brightness lighting displays, high resolution printers, projection displays, next generation DVD players, medical imaging, and efficient solid-state lighting.

Patent Number: US8541869B2
Application Number: US200830099A
Inventor: Nakamura, Shuji | Speck, James S. | DenBaars, Steven P. | Tyagi, Anurag
Priority Date: 12 Feb 2007
Priority Number: US8541869B2
Application Date: 12 Feb 2008
Publication Date: 24 Sep 2013
IPC Current: H01L003316
US Class: 257627 | 257014 | 257103 | 257613 | 257E33003 | 372044011 | 438033 | 438046 | 438973
Assignee Applicant: The Regents of the University of California
Title: Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates
Usefulness: Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates
Novelty: Optoelectronic device has group III-nitride substrate, and group III-nitride semiconductor light emitting device formed on surface of group III-nitride substrate having semipolar orientation

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8541869

Background

Current group-III nitride lasers are grown on polar c-plane substrates and usually employ dry-etched facets, which are inherently rough. Since these devices suffer from reduced efficiency due to high polarization-induced electric fields and scattering loss, there is a need for a high-efficiency laser diode that avoids these shortcomings.

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Improved Manufacturing of Semiconductor Lasers
• Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Oxyfluoride Phosphors for Use in White Light LEDs
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Improved GaN Substrates Prepared with Ammonothermal Growth
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Photoelectrochemical Etching for Chip Shaping Of LEDs
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Nonpolar III-Nitride LEDs With Long Wavelength Emission
• Method for Growing Self-Assembled Quantum Dot Lattices
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Solid Solution Phosphors for Use in Solid State White Lighting Applications
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Calcium Impurity Reduction for Improved Light-Emitting Devices
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

21809/2007-423-0

Related Cases

2007-423-0

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