Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
技術優勢
Allows for the production of thick a-plane GaN films for use as substrates for polarization-free device growth; Produces films of superior quality that are suitable for subsequent device regrowth by a variety of growth techniques.
技術應用
Fabrication of GaN by HVPE This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
詳細技術說明
Scientists at the University of California have developed a novel method for growing high-quality thick films of a-plane GaN suitable for use as substrates in homoepitaxial device layer regrowth. This invention can be used in conjunction with a method for growing reduced-dislocation density non-polar GaN by hydride vapor phase epitaxy (HVPE) (UC Case 2003-224).
附加資料
Patent Number: US7427555B2 Application Number: US2003537385A Inventor: Haskell, Benjamin A. | Fini, Paul T. | Matsuda, Shigemasa | Craven, Michael D. | DenBaars, Steven P. | Speck, James S. | Nakamura, Shuji Priority Date: 16 Dec 2002 Priority Number: US7427555B2 Application Date: 3 Jun 2005 Publication Date: 23 Sep 2008 IPC Current: H01L0021205 US Class: 438478 | 117099 | 257E21108 | 257E21121 | 257E29097 Assignee Applicant: The Regents of the University of California | The Japan Science and Technology Agencyitama Prefecture Title: Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy Usefulness: Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy Summary: Used for the formation of a planar, non-planar, a-plane gallium nitride film on a substrate used for the manufacturing a laser diode, light emitting diode and transistor (claimed). Novelty: Formation of planar, non-planar, a-plane gallium nitride film on sapphire substrate for device regrowth involves growing film by reacting gaseous hydrogen chloride with gallium followed by transporting on substrate using hydrogen
主要類別
光學
細分類別
發光二極管/有機發光二極管
申請號碼
7427555
其他
Background
Gallium nitride (GaN) and its ternary and quaternary compounds incorporating aluminum and indium (AlGaN, InGaN, AlInGaN) have proven useful in fabricating visible and ultraviolet optoelectronic devices and high-power electronic devices. GaN and its alloys are most stable in the hexagonal w'rtzite crystal structure. However, the positions of the gallium and nitrogen atoms in this structure leads to polarization of the GaN crystals along the c-axis. Virtually all GaN-based devices are grown parallel to the polar c-axis, due to the relative ease of growing planar Ga-face planes. In addition, strain at the interfaces between adjacent dissimilar layers causes piezoelectric polarization and subsequent charge separation. These polarization effects decrease the likelihood of electron and hole interaction, which is essential for the operation of light-emitting devices. As a result, eliminating these polarization effects inherent to c-axis oriented devices could greatly enhance the efficiency of GaN light-emitting devices.
