A CMOS Compatible Fully-Integrated Switched-Domain Power Inverter Circuit
The key advantage of the proposed technology is CMOS compatibility, high efficiency, which equates to longer battery life and operational‐time.
The technology is suitable for broad range of applications, including: RFpower amplifiers (PA), 20kHz audio amplifiers, and 50-60 Hz power inverters. The above technology will have immediate application in portable electronics by leveraging an all CMOS design (no separate PA’s or transformers) to reduce the cost and complexity of hardware while also extending battery life.
Researchers at UC San Diego have invented a DC-RF power inverter that efficiently synthesizes high-voltage RF waveforms directly from a battery voltage using thin-oxide CMOS switches. Instead of stacking transistors or employing large inductive transformation ratios, high output power is generated by switching individual class-D power amplifier (PA) cells in a 2-phase house-of-cards (HoC) topology to provide voltage addition of the cells outputs without exceeding device voltage ratings, effectively resulting in a solid-state RF impedance transformer. High-efficiency at back-off is then achieved by capacitively combining the output of two HoC networks nominally set to generate different amplitudes, enabling voltage-mode Doherty-like back-off without a bulky transmission line. The PA is implemented in 65nm bulk LP CMOS, operates from 4.8V, and provides a battery-to-RF efficiency above 40% at both 23dBm and 6dB back-off at 720MHz.
20180097486
State Of Development Research stage with a working prototype Intellectual Property Info This technology is patent pending and available for commercial development. Tech ID/UC Case 27322/2016-088-0 Related Cases 2016-088-0
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