Highly uniform polycrystalline silicon thin film transistors produced using sequential excimer laser annealing
Polycrystalline silicon thin film transistors are produced by melting and recrystallizing amorphous silicon using excimer laser annealing. However, conventional annealing methods using a single excimer laser beam may produce non-uniformities due to short pulse durations that limit crystal growth. This technology uses a four excimer laser system for sequential laser firing that enables lateral silicon crystal growth, creating uniform thin film transistors with high electron mobility. As a result, this technology provides a robust method to process thin film transistors that are used in a multitude of flat panel display devices, ranging from televisions to mobile devices.
Enables efficient processing of large size thin film transistor panels with high uniformityIncreases excimer laser pulse duration range with low energy loss Reduces energy requirement for excimer laser annealing Extends lateral crystal growth during annealingProduces thin film transistors with high electron mobility Patent Information:Patent Pending Tech Ventures Reference: IR CU14158
Thin film transistors for active matrix liquid crystal displays in flat panel consumer electronics, such as televisions, computer monitors, and mobile devices Semiconductor and transistor fabricationPhotolithography
None
美國
