Fabrication of highly uniform, large-crystal polycrystalline silicon thin film using advanced excimer laser annealing
Polycrystalline silicon thin films are used in a wide array of electronic applications such as integrated circuits, displays, and solar cells. Such films are typically manufactured by heating amorphous silicon films with a pulsed excimer laser to induce crystallization by annealing. This technology is an improvement to the excimer laser annealing (ELA) process for production of high-quality polycrystalline silicon thin films. It employs an advanced ELA (AELA) system to control the shape and melt profile of film regions to promote desirable crystal growth by adjusting the shape of the laser beam used to irradiate the film.
Improves performance of thin film electronics by increasing charge mobility and thereby reducing film resistanceReduces energy costs of fabricating large-grain thin filmsIncreases energy efficiency of electronics that use thin films by reduction of film resistanceHigh throughput and inexpensivePatent information:Patent Pending Tech Ventures Reference: IR CU14157
High performance electronic displaysHigh efficiency photovoltaic cellsIntegrated electronic circuits with reduced power requirements
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