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An NH Terminated Single Crystal Silicon Surface and a Method for its Preparation
詳細技術說明
A well-defined surface of single crystalline silicon was prepared to contain a single –NH- functionality. The nature of the surface was confirmed by several surface analytical techniques including X-ray photoelectron spectroscopy and infrared spectroscopy. The produced surface is nearly atomically flat as was interrogated by atomic force microscopy and the spectroscopic signatures confirm the uniform termination. State of Development: We have silicon wafers with the modified surface in hand.
國家
United States
申請號碼
Patent Pending
國家/地區
美國
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