Low Temperature Growth of Graphene on Arbitrary Substrates
Researchers at Purdue University have discovered a simple process for producing graphene at lower temperatures, around 650 degrees Celsius, using remote plasma-enhanced chemical vapor deposition (PECVD) on various substrates. This new method is a one-step process, completely catalyst free, and does not require any pre-processing. Furthermore, this process enables full coverage of graphene over large areas within a few minutes, making this approach greener than conventional techniques. This low-temperature, rapid, non-catalytic synthesis of graphene is believed to provide a means for industrial mass production of graphene devices.
Rapid graphene growth on arbitrary non-catalytic materialsEliminates the need to transfer graphene Provides feasible means for industrial mass production of graphene devices
Manufacturing graphene devices
Zhihong ChenChen LabPurdue Electrical and Computer Engineering
United States
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美國
