Electron-Beam Lithography
Researchers at Purdue University have a developed a new technology that utilizes a novel device to focus optical energy at nanoscale and locally excite electrons to form massively parallel electron beams, which can be used to perform maskless lithography in mass quantities. Maskless lithography can write finer features by rastering a nanometer-sized beam or probe to generate surface patterns and has been applied to niche applications such as device prototyping and low-volume production. Among all maskless methods, electron beam lithography can provide high resolution beyond the 10-year industry roadmap. Electron-beam lithography also has the highest scanning speed. This technology could be used for top-down nanomanufacturing methods to carry on the trends of ever decreasing critical dimensions and ever increasing design complexities of semiconductor chips at a relatively low cost.
Focuses optical energy at nanoscalePerform maskless lithography in mass quantitiesHighest scanning speedSemiconductor chip design at a lower cost
Semiconductor industryFurther development of nanotechnologyPhotonics and biological systems
Liang PanLaboratory of Plasmon-Assisted NanomanufacturingPurdue Mechanical Engineering
United States
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