Oxygen Plasma Treatment Significantly Boosts Electrical Resistivity in TMDC Materials
Continuous tuning of MoS2 electrical properties via an external control Over 1000 times more electrical resistivity than untreated TMDC
Sensors Diodes Quantum tunneling devices Resonant tunneling devices Solar cells Later p-n junctions
The 2D TMDC material is a layer that is one to eight atomic layers thick (0.9 - 6 nanometers), and the plasma in an oxygen-containing ambient treatment selectively oxidizes to form defect regions in all layers. A single-layer or a few-layer 2D semiconductor transition metal dichalcogenide (TMDC) material is deposited onto a substrate. The energized oxygen molecules interact with MoS2 to create insulating, MoO3-rich, defect regions. This method forms oxidized dielectric TMDC material which has a higher electrical resistivity, compared to untreated material.
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