Semiconductor Alloys for Operation in the Solar-Blind Region
Functions in solar blind region Faster UV detection
Covert space-to-space communications Missile threat detection Chemical or biological threat detection
The new semiconductor material is comprised of a single crystal cubic oxide substrate and an epitaxial cubic oxide alloy layer consisting of a transition metal or group IIA metal on the top surface of the substrate. The material has a sodium chloride structure, in which each of the two atom types form a separate face-centered cubic lattice, with the two lattices interpenetrating to form a 3D checkerboard pattern. Since there needs to be a matching of lattice structures between two different semiconductor materials in order to allow a region of band gap change, without introducing a change in the crystal structure, the cubic epitaxial material is lattice matched within 5% to the lattice of the substrate and as low as 1.5%.
Patent Number: US8362476B2
Application Number: US2010726545A
Inventor: Schoenfeld, Winston V.
Priority Date: 18 Mar 2009
Priority Number: US8362476B2
Application Date: 18 Mar 2010
Publication Date: 29 Jan 2013
IPC Current: H01L002910 | H01L002924
US Class: 257043 | 257055 | 257103
Assignee Applicant: University of Central Florida Research Foundation Inc.lando
Title: Cubic semiconductor alloys for deep UV applications
Usefulness: Cubic semiconductor alloys for deep UV applications
Summary: Cubic epitaxial article e.g. light-emitting diode, laser diode and broadband light source (all claimed). Uses include but are not limited to ultraviolet photodetector, semiconductor device, optical modulator and light emitters.
Novelty: Cubic epitaxial article e.g. light-emitting diode, has single crystal cubic oxide substrate having substrate band gap and top surface, and epitaxial cubic oxide alloy layer containing transition metal and/or element of group IIA
光學
發光二極管/有機發光二極管
美國
