Surface Plasmon Optical Modulator
Increases speed of communication between microprocessors/microchips, allowing for faster computing. Reduces the area required to communicate, reducing the size of chipsets. Allows for very fast optical communication which increases data transfer bandwidths in chipsets. Smaller than current technologies so it can fit in tighter spaces reducing the footprint size.
Boise State University has invented a device with rapid signaling and a smaller footprint. The present invention improves modulation efficiency (or increases modulation speed) of optical modulators, and does not require that the light wavelength correspond to the band edge of the semiconductor materials used nor does this invention require amplification of the surface plasmons of the MIS tunneling diode junction. Furthermore, this invention does not require wave-guiding to transport surface plasmons from an optical receiving structure to an optical sending. This device allows for very fast optical communication in a computer chip while reducing the space required. The basic concept is that light is shown on a metal-insulator barrier and based on the voltage applied across that barrier (and some other more complex phenomena) electrons either do or do not travel through the barrier resulting in a signal on the other side. The advantage of this process is that the signal can be turned on and off much faster and in a smaller space than is currently possible with other techniques. It allows for high bandwidth (perhaps over 20 Gbps) communication between microprocessors and chipsets in a small area.
Patent Number: US8314985B2
Application Number: US2009607895A
Inventor: Kuang, Wan
Priority Date: 28 Oct 2008
Priority Number: US8314985B2
Application Date: 28 Oct 2009
Publication Date: 20 Nov 2012
IPC Current: G02F000103 | G02F000107
US Class: 359263 | 359245
Assignee Applicant: Boise State University,Boise
Title: Surface plasmon optical modulator
Usefulness: Surface plasmon optical modulator
Novelty: Surface plasmon optical modulator for integrated optoelectronics, has phase-matching optically coupled metal-insulator-semiconductor tunneling diode with external bias applied across insulator
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