Selective Transfer Of A Thin Pattern From Layered Material Using A Patterned Handle
Leverages established processing steps and is CMOS-process-compatible Enables the handle layer to be self-aligned to material isolated by etching, using the photoresist as a standard etch mask Amenable to stamp-based methods, where the pattern handle is itself the transfer medium
Removal of nanometers-thick, laterally patterned material a many-layered Van der Waals crystal (e.g., graphite or molybdenite) for depositing on a desired substrate Relevant applications are for optical, electronic, sensing, and biomedical devices Allows patterned nanoscale-layered material to be isolated and transferred using standard pressure-sensitive adhesives or viscoelastic stamps
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Additional Technologies by these Inventors Tech ID/UC Case 27650/2017-154-0 Related Cases 2017-154-0
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