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Electrically Gated Modulation of Spin Hall Torque Effects in Magnetic Nanostructures

详细技术说明

This invention is a follow-on discovery to the Reliable, Low-power MRAM technology (Cornell docket 5587) and combines the Spin Hall Effect (SHE) with voltage control of magnetic anisotropy (VCMA) to enable improved and different functionality in SHE torque effects in magnetic elements.

其他

Patent application: WO2014025838

Luqiao Liu, Chi-Feng Pai, D. C. Ralph, R. A. Buhrman, "Gate voltage modulation of spin-Hall-torque-driven magnetic switching," Cornell University (2013)

国家/地区

美国

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