Nonpolar (Al, B, In, Ga)N Quantum Well Design

Increased quantum well width in order to optimize emission in nonpolar nitride-based devices.

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Scientists at the University of California have developed a novel approach to designing high-performance nonpolar quantum wells. This technique can be used to grow higher-emission structures by increasing the quantum well width.

Patent Number: US20070128844A1
Application Number: US2003582390A
Inventor: Craven, Michael, D. | DenBaars, Steven, P.
Priority Date: 15 Apr 2003
Priority Number: US20070128844A1
Application Date: 9 Jun 2006
Publication Date: 7 Jun 2007
IPC Current: H01L002128 | C30B002502 | C30B002504 | C30B002510 | C30B002518 | C30B002940 | C30B002960 | H01L002100 | H01L002120 | H01L0021205 | H01L002915 | H01L002920 | H01L003300
US Class: 438602 | 257E21113 | 257E21121 | 257E21126 | 257E29078
Title: Non-polar (a1,b,in,ga)n quantum wells
Usefulness: Non-polar (a1,b,in,ga)n quantum wells
Summary: For forming a nitride semiconductor device (claimed).
Novelty: Formation of nitride semiconductor device, comprises growing gallium nitride layer(s) on substrate, and growing non-polar (aluminum, boron, indium, gallium) nitride layer(s) on gallium nitride layers to form at least one quantum well

光学

发光二极管/有机发光二极管

9893236

Background

Nitride-based optoelectronic devices currently utilize quantum well structures that are grown in polar directions. The polarization-induced electric fields that result from this growth orientation influence the structure's energy band profiles, which then effect its optical emission characteristics. The internal electric field tilts the energy band profiles and spatially separates the charge carriers, which reduces the oscillator strength of the electron-hole pair and ultimately reduces the recombination efficiency of the quantum well. Nonpolar nitride-based semiconductor crystals do not experience the effects of polarization-induced electric fields since the energy band profiles are flat. As a result, nonpolar quantum wells should exhibit improved recombination efficiency, as well as achieve more intense emission from thicker quantum wells.

Additional Technologies by these Inventors

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• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
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• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
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• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
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• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
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• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
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• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

10277/2003-529-0

Related Cases

2003-529-0

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