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A Double-Dose Ebeam Lithograpy Process
技术优势
Large undercut and fine linewidth
技术应用
Single electron transistor fabrication
详细技术说明
Researchers at UC Irvine have developed a double-dose exposure process which easily achieves both higher linewidth resolution and a large undercut. Using this process, a top linewidth of 40 nm and undercut of more than 400nm can be achieved. This technique is important for electronic device applications such as the fabrication of single electron transistors.
其他
Tech ID/UC Case 20767/2006-334-0 Related Cases 2006-334-0
国家/地区
美国
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