Internal Electrostatic Transduction Resonators
Dielectric materials such as TiO2 or HfO2 are not just CMOS compatible and qualified, they are already available in state-of-the-art CMOS foundries.Lateral bulk resonators with narrow trenches that are filled with the transducing dielectric can be deposited conformally using atomic layer deposition. To date, growing high quality trench side-walls has not been achieved with piezoelectric materials such as ZnO or AiN.This transduction scheme is not limited by the third overtone; long strip resonators running at very high overtones can be fabricated. This structure will further increase transduction efficiency and enables two-port resonators with small feed-through as well as passive mixers, at RF frequencies.These resonators have structural elements that are very similar to vertical channel FinFET transistors, thereby enabling built-in active impedance transformation which will greatly simplify the use of resonator arrays as signal processing structures or computing substrates.High electric fields are confined within the resonator, which eliminates the reliability concerns of exposed surfaces with high electric fields.Eliminating the air-gap significantly improves fabrication yields.
Micromechanical filters, oscillators and mixers.
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Patent Number: US7522019B2
Application Number: US2005146303A
Inventor: Bhave, Sunil A. | Howe, Roger T.
Priority Date: 4 Jun 2004
Priority Number: US7522019B2
Application Date: 3 Jun 2005
Publication Date: 21 Apr 2009
IPC Current: H03H000900 | H03H0009125
US Class: 333187 | 333188
Assignee Applicant: The Regents of the University of California
Title: Internal electrostatic transduction structures for bulk-mode micromechanical resonators
Usefulness: Internal electrostatic transduction structures for bulk-mode micromechanical resonators
Summary: As a micromechanical resonator such as a film bulk acoustic resonator (FBAR), e.g. for operation at around 1.9 GHz or above.
Novelty: Bulk mode micromechanical resonator e.g. film bulk acoustic resonator has electrostatic transducer with dielectric layer filled between electrodes, located at maximum strain antinode of microresonator to transduce resonator acoustic modes
电子
半导体
7522019
Tech ID/UC Case 17358/2004-051-0 Related Cases 2004-051-0
美国
