Thin Film Crystal Growth By Laser Annealing
Improved electrical properties of the resulting TFTDoes not require fabrication of a mask structure over the amorphous siliconProvides control over both the length and directionality of crystal growth
Active matrix liquid crystal displaysField emission displaysOrganic light emitting diode displaysOptical sensors
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Patent Number: US6451631B1
Application Number: US2000637325A
Inventor: Grigoropoulos, Costas P. | Hatano, Mutsuko | Lee, Ming Hong | Moon, Seung Jae
Priority Date: 10 Aug 2000
Priority Number: US6451631B1
Application Date: 10 Aug 2000
Publication Date: 17 Sep 2002
IPC Current: H01L002120 | H01L0021268 | H01L0021336 | H01L0029786
US Class: 438149 | 257E21134 | 438487
Assignee Applicant: Hitachi America Ltd.,Brisbane | The Regents of the University of California,Oakland
Title: Thin film crystal growth by laser annealing
Usefulness: Thin film crystal growth by laser annealing
Summary: For forming thin film crystal for thin film transistor manufacture, for flat panel active matrix liquid crystal display, field emission display, organic EL display. Also for manufacture of photosensor, etc.
Novelty: Thin film crystal formation using laser annealing, e.g. for thin film transistor (TFT) manufacture, involves irradiating amorphous silicon layer with two sets of laser beams to form polycrystalline silicon layer with larger grain size
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Related Technologies Tech ID/UC Case 16953/2000-079-0 Related Cases 2000-079-0
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