A Method For Forming Double-gate Metal Oxide Semiconductor Field Effect Transistors
double gate structure reduces short channel effectsdouble gates provide enhanced drive current
None
Patent Number: US6041380A
Application Number: US199810084A
Inventor: LaBerge, Paul A.
Priority Date: 21 Jan 1998
Priority Number: US6041380A
Application Date: 21 Jan 1998
Publication Date: 21 Mar 2000
IPC Current: G06F001340
US Class: 710306 | 710129 | 710105 | 713501
Assignee Applicant: Micron Electronics Inc.,Nampa
Title: Method for increasing the number of devices capable of being operably connected to a host bus
Usefulness: Method for increasing the number of devices capable of being operably connected to a host bus
Summary: Host bus operating method in multi process computer system.
Novelty: Host bus operating method applied in computer system, involves transmitting signal to primary bus after one and half cycles of which address strobe is transmitted to secondary bus
电子
半导体
6413802
Tech ID/UC Case 16952/2000-078-0 Related Cases 2000-078-0
美国
