Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification.
Lead Inventors: James S. ImMethods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are described.The method involves generating a sequence of excimer laser pulses which is homogenized in a predetermined plane. The homogenized laser pulse is masked with a two dimensional pattern of substantially opaque dots to generate a dot patterned beamlets. An amorphous silicon thin film sample is irradiated to effect melting. The amorphous silicon thin film sample is processed into a polycrystalline silicon thin film.Manufacturing techniques which generate larger and uniformly microstructured polycrystalline silicon thin films to be used in the fabrication of high quality devices are provided.
Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are described.The method involves generating a sequence of excimer laser pulses which is homogenized in a predetermined plane. The homogenized...
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