Low Temperature Growth of Graphene on Arbitrary Substrates
Researchers at Purdue University have discovered a simple process for producing graphene at lower temperatures, around 650 degrees Celsius, using remote plasma-enhanced chemical vapor deposition (PECVD) on various substrates. This new method is a one-step process, completely catalyst free, and does not require any pre-processing. Furthermore, this process enables full coverage of graphene over large areas within a few minutes, making this approach greener than conventional techniques. This low-temperature, rapid, non-catalytic synthesis of graphene is believed to provide a means for industrial mass production of graphene devices.
Rapid graphene growth on arbitrary non-catalytic materialsEliminates the need to transfer graphene Provides feasible means for industrial mass production of graphene devices
Manufacturing graphene devices
Zhihong ChenChen LabPurdue Electrical and Computer Engineering
United States
None
美国
