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Power Amplifiers Based on Stacked Transistor Biasing
总结
Researchers at Purdue University have developed a new silicon-on-insulator power amplifier based on dynamic biasing of stacked transistors. This power amplifier has much higher efficiency than previous silicon-based designs, and it is also smaller and more tightly integrated. These features could make the amplifier circuit useful for increasing the battery life of new portable devices.
技术优势
Higher efficiency than silicon designs Smaller, more tightly integrated Increased battery life of portable devices
技术应用
Component for cellular phones and other portable communication systems
详细技术说明
Saeed MohammadiPurdue Electrical and Computer Engineering
国家
United States
申请号码
N/A
国家/地区
美国
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