Method For Epitaxial Growth Of (110)-Oriented Srtio3 Thin Films On Silicon Without Template
A Process And Structure Utilizes Pulsed Laser Deposition Technique To Grow Srtio3 (Sto) Films With Single (110) Out-Of-Plane Orientation Upon A Surface Of All (100), (110) And (111)-Oriented Silicon (Si) Substrates. No Designed Buffer Layer Is Needed Beneath The Sto Thin Films. The In-Plane Alignments For The Epitaxial Sto Films Grown Directly On Si (100) Are As Sto [001]//Si [001] And Sto [1 10]/Si [010]. The Srtio3/Si Interface Is Epitaxially Crystallized Without Any Amorphous Oxide Layer. The Formation Of A Coincident Site Lattice At The Interface Between Si And A Sr-Silicate And/Or Sto Helps To Stabilize Sto In The Epitaxial Orientation. The Invention Can Be Applied To Epitaxial Template And Barrier For The Integration Of Many Other Functional Oxide Materials On Silicon.; In Particular, The (110)-Oriented Sto Structure Is Useful For Practical Applications Such As The Preparation Of Ferroelectric-Insulator-Semiconductor Devices As Well As Providing A Broad Solution To The Generic Problem Of Polarity Discontinuities At Perovskite Heterointerfaces.
Patent Number: US7718516B2
Application Number: US2007690188A
Inventor: Hao, Jianhua | Gao, Ju
Priority Date: 23 Mar 2006
Priority Number: US7718516B2
Application Date: 23 Mar 2007
Publication Date: 18 May 2010
IPC Current: H01L002120 | H01L002136
US Class: 438481 | 257E2109 | 438483 | 438715
Assignee Applicant: The University of Hong Kong
Title: Method for epitaxial growth of (110)-oriented SrTiO3 thin films on silicon without template
Usefulness: Method for epitaxial growth of (110)-oriented SrTiO3 thin films on silicon without template
Summary: Method for growing strontium titanate film of strontium titanate (STO) structure used in ferroelectric-insulator-semiconductor device.
Novelty: Strontium titanate film growing method for strontium titanate (STO) structure of ferroelectric-insulator-semiconductor device, involves crystallizing strontium-silicate interfacial layer epitaxially onto silicon substrate under low pressure
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