Low Density Drain HEMTsAlGaN/GaN 增強型異質結場效應晶體管的製備
III-nitride compound semiconductors have the merits of wide band gap, high breakdown field, and large thermal conductivity, which results in well designed AlGaN/GaN heterojunction field-effect transistors. This transistor is capable of high temperature operation, suitable for high temperature integrated circuits. In the direct-coupled FET logic (DCFL), enhancement-mode HFETs are used as the drives while the depletion-mode HFETs are used as the load. In order to implement DCFL integrated circuits, a technology for monolithic initegration of enhancement-mode and depletion-mode (E/D) HFETs is needed.
This invention discloses a method of fabricating enhancement-mode AlGaN/GaN HFETs using fluoride-based plasma treatment and post-gate annealing.
It is effective and highly reproducible for fabricating self-aligned E-mode AlGaN/GaN HFETs. With the use of fluorine ions, which have strong electronegativity, it reduces treatment or implantation induced damages while maintaining stability.
This invention can be applicable in Single supply voltage RF/microwave integrated circuits like low-noise amplifiers, oscillators, mixers, and power amplifiers as well as in GaN-based digital ICs for high temperature electronics, which are demanded by automotive and aerospace applications, chemical reactor controllers, and oil-drilling equipment, etc.
1. A strictly self-aligned approach
2. No additional photolithography: cost saving
3. Additional reduction of gate leakage current: wider operating range, no need for level shifting
4. Excellent cross-sample uniformity
- Single supply voltage RF/microwave integrated circuits: low-noise amplifiers, oscillators, mixers, and
power amplifiers
- GaN-based digital ICs for high temperature electronics, which are demanded by automotive and
aerospace applications, chemical reactor controllers, and oil-drilling equipment, etc.
Patent Number: CN101336482B
Application Number: CN200680052007A
Inventor: Keimay Lau | Jing Chen
Priority Date: 29 Nov 2005
Priority Number: CN101336482B
Application Date: 29 Nov 2006
Publication Date: 1 Dec 2010
IPC Current: H01L0029778 | H01L0021335 | H01L0029772
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Low density drain hemts | Low density drain HEMT
Usefulness: Low density drain hemts | Low density drain HEMT
Summary: For use e.g. as heterojunction field effect transistor.
Novelty: Field-effect transistor includes fluorine-based plasma treated channel electrically separating source contact from drain contact, and region of trapped charge between gate and channel and extending laterally toward drain
电子
半导体
29 Jul 2008
Chinese 200680052007.1
Chinese ZL200680052007.1
TTC.PA.265
香港
