An Ultrathin Interfacial Layer for Organic Photovoltaic Devices and Therefrom
Polymeric photovoltaic devices promise low-cost production of lightweight, flexible solar cells. Recent progress in polymeric solar cells, has led to higher power conversion efficiencies, and will be massively manufactured in near future. In organic/polymeric solar cells, the active layer usually has a thickness of around 100 nm, due to its poor electric conductivity. Electrode interface engineering is a key strategy to improve the device performance and stability. Previous efforts in search of interfacial materials for higher device performance have been focused on LiF, Ca, Ba, TiO2, ZnO, MoO3 and Cs2CO3. However, these materials tend to be unstable by themselves due to water and oxygen species, or complicated fabrication process, or stringent requirements for expensive fabrication facilities. Moreover, the device stability with the aforementioned material as the interfacial layer between the collection electrode and organic/polymeric active layer is usually poor. A special transition metal oxide is found to effectively reduce the device degradation and improve the conversion efficiency as well. And it has unique attributes such as transparent, high thermal stability, insusceptible the ambient surroundings. The raw material used for fabrication of the interfacial layer is easily accessible. The holistic device process is easily reproducible. And it is applicable for large scale fabrication and flexible substrate, which is very unique for organic devices such as organic photovoltaic devices and other organic electronic devices. The new process invented here is a low cost solution, which relies on the inexpensive equipment. The process is simple and the raw material used for fabrication is easily acquired. The throughput is high and appropriated for large area fabrication. The stability of polymeric photovoltaic devices will be sly meliorated by this special transition-metal oxide. It will ensure promising applications in organic electronic devices to extend device lifetime.
10/ENG/387
Inventor(s): Professor XU Jian Bin, Department of Electronic Engineering
Patent Status: Licensing Status: US Patent Pending Available for licensing
香港
