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Synthesis and Thin Film Fabrication of Lithographically Patternable Block Copolymers Consisting of Polar and Non-polar Blocks

詳細技術說明
Cornell University offers a method to obtain integratednm scale patterns. This technology involves a technique to obtain high lateralordering of two immiscible self-assembling block copolymers and subsequent degradationof one of the polymers resulting in fine tunable areas having nanoscalepatterns.
*Abstract

With thispatented approach it is possible to create nm scale patterns of packed arraysof spheres, cylinders, and lamellae with fine-tunability of nano-domain size(3−50 nm). These high-resolution hierarchical structures can function as nano-deviceswith integrated nanoscale pattern or alternately can serve as patternedtemplates or scaffolds for the fabrication of various types of multifunctionalnanomaterials. Such patterns cannot be obtained by only conventionallithography or block copolymer lithography.

 

In the presentexample, lateral ordering of arrays of polystyrene dots were achieved in thinfilms of poly (styrene-block-2,2,2-trifluoroethyl methacrylate) (PS-b-PTFEMA) andpoly [styrene-block-(methyl methacrylate-co-2,2,2-trifluoroethyl methacrylate)](PS-b-(PMMA-co-PTFEMA)). These thin films were subjected to conventionallithographic processing using e-beam and deep-UV radiation to create integratedpatterns such as “dots in lines” as shown in the figure below.

 

Potential Applications

· Semiconductor/IC

· Photonic band gap materials

· Magnetic storage materials

· Lithography

 

Advantages

· 5-50nm scale features achievable

· Almost defect-free lateral and vertical orderingof polymer

 

*Licensing
Carolyn A. Theodorecat42@cornell.edu607 254 4514
其他

Publications

· Rina Maeda,† Teruaki Hayakawa,† and Christopher K. Ober, “Dual Mode Patterning of Fluorine-ContainingBlock Copolymers through Combined Top-down and Bottom-up Lithography”, Chem. Mater. 2012, 24, 1454−1461.

· C. Ober, R. Maeda, N. You, T. Hayakawa. Block Copolymers and LithographicPatterning Using Same; U.S. Patent 9,541,830. January 10, 2017.

國家/地區
美國

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